Volume 52, Issue 30 pp. 7751-7755
Communication

Doping of Organic Semiconductors: Impact of Dopant Strength and Electronic Coupling

Henry Méndez

Henry Méndez

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

Pontificia Universidad Javeriana, Departamento de Física, Carrera 7 No. 43-82 Ed.52, Bogotá (Colombia)

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Georg Heimel

Corresponding Author

Georg Heimel

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)Search for more papers by this author
Andreas Opitz

Andreas Opitz

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

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Katrein Sauer

Katrein Sauer

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

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Patrick Barkowski

Patrick Barkowski

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

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Martin Oehzelt

Martin Oehzelt

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

Helmholtz Zentrum Berlin für Materialien und Energie – BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin (Germany)

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Junshi Soeda

Junshi Soeda

Osaka University, Institute of Scientific and Industrial Research (ISIR), Mihogaoka 8–1, Ibaraki, Osaka, 567-0047 (Japan)

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Toshihiro Okamoto

Toshihiro Okamoto

Osaka University, Institute of Scientific and Industrial Research (ISIR), Mihogaoka 8–1, Ibaraki, Osaka, 567-0047 (Japan)

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Jun Takeya

Jun Takeya

Osaka University, Institute of Scientific and Industrial Research (ISIR), Mihogaoka 8–1, Ibaraki, Osaka, 567-0047 (Japan)

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Jean-Baptiste Arlin

Jean-Baptiste Arlin

Université Libre de Bruxelles (ULB), Chimie des Polymères, CP206/1 Boulevard du Triomphe, 1050 Bruxelles (Belgium)

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Jean-Yves Balandier

Jean-Yves Balandier

Université Libre de Bruxelles (ULB), Chimie des Polymères, CP206/1 Boulevard du Triomphe, 1050 Bruxelles (Belgium)

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Yves Geerts

Yves Geerts

Université Libre de Bruxelles (ULB), Chimie des Polymères, CP206/1 Boulevard du Triomphe, 1050 Bruxelles (Belgium)

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Norbert Koch

Norbert Koch

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

Helmholtz Zentrum Berlin für Materialien und Energie – BESSY II, Albert-Einstein-Strasse 15, 12489 Berlin (Germany)

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Ingo Salzmann

Corresponding Author

Ingo Salzmann

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)

Humboldt-Universität zu Berlin, Institut für Physik, Brook-Taylor-Strasse 6, 12489 Berlin (Germany)Search for more papers by this author
First published: 19 June 2013
Citations: 194

We thank Paul Zybarth and Timo Florian (HU Berlin), Wolfgang Caliebe (DESY—HASYLAB), and Roland Resel and Alexander Pichler (TU Graz, Austria) for experimental support, Günter Wagner (Leibniz Institut für Kristallzüchtung) for film-thickness measurements, and Armin Moser (TU Graz, Austria) for providing the software package PyGid. This research was financially supported by the Academic Vice-Rectorate of Pontificia Universidad Javeriana (Colombia) and the Katholischer Akademischer Ausländer Dienst (KAAD) (H.M.), as well as by the ARC program of the Communauté française de Belgique (grant no. 20061 to Y.G., J.Y.B., J.B.A.).

Graphical Abstract

Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.

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