Volume 516, Issue 1-2 pp. 59-60
Original Paper

Advances of pulsed laser deposition of ZnO thin films

M. Lorenz

Corresponding Author

M. Lorenz

University of Leipzig, Faculty of Physics and Geosciences, Linnéstr. 5, 04103 Leipzig, Germany

Search for more papers by this author
H. Hochmuth

H. Hochmuth

University of Leipzig, Faculty of Physics and Geosciences, Linnéstr. 5, 04103 Leipzig, Germany

Search for more papers by this author
R. Schmidt-Grund

R. Schmidt-Grund

University of Leipzig, Faculty of Physics and Geosciences, Linnéstr. 5, 04103 Leipzig, Germany

Search for more papers by this author
E.M. Kaidashev

E.M. Kaidashev

University of Leipzig, Faculty of Physics and Geosciences, Linnéstr. 5, 04103 Leipzig, Germany

Rostov-on-Don State University, Mechanics and Applied Mathematics Research Institute, 344090 Rostov-on-Don, Russia

Search for more papers by this author
M. Grundmann

M. Grundmann

University of Leipzig, Faculty of Physics and Geosciences, Linnéstr. 5, 04103 Leipzig, Germany

Search for more papers by this author
First published: 10 February 2004

Abstract

Advances in Pulsed Laser Deposition (PLD) equipment and process design for the epitaxy of ZnO thin films on a-, and c-oriented sapphire substrates are reported. The achieved improvement of device relevant ZnO layer properties is directly related to our equipment design and novel process schemes. First results on growth and reflectivity of ZnO-MgO based dielectric Bragg resonators for future ZnO-based light emitter devices are shown.

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.