Chapter 2
Bulk Micromachining
Xinxin Li,
Heng Yang,
Xinxin Li
State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorHeng Yang
State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorXinxin Li,
Heng Yang,
Xinxin Li
State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorHeng Yang
State Key Lab of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050 China
Search for more papers by this authorBook Editor(s):Masayoshi Esashi,
Masayoshi Esashi
Search for more papers by this authorFirst published: 23 April 2021
Summary
Bulk micromachining is the technology using selective etching of silicon substrates and bonding of multiple etched and/or unetched wafers to fabricate micro-electro mechanical systems (MEMS). The electromechanical structures in bulk micromachining are usually much thicker than those in surface micromachining, which are appreciated in many MEMS devices. The anisotropic wet etching is widely used in bulk micromachining because of the significant improvement on machining accuracy over isotropic wet etching. Wafer bonding is the one key bulk micromachining technology. There are roughly three types of wafer bonding: direct wafer bonding, anodic bonding, and intermediate-layer bonding. The SCREAM process is one of the earliest known single-sided bulk micromachining processes used to fabricate freestanding structures with high aspect ratio in single-crystal silicon substrates. A developed micro-holes interetch and sealing process is deserved to be introduced where no epitaxy is used in its single-wafer single-sided bulk-micromachining fabrication.
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