Chapter 5

Ab Initio Calculations of Two-Dimensional Topological Insulators*

Gustav Bihlmayer

Gustav Bihlmayer

Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich and JARA, 52425 Jülich, Germany

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Yu. M. Koroteev

Yu. M. Koroteev

Siberian Branch, Russian Academy of Sciences, Institute of Strength Physics and Materials Science, pr. Akademicheskii 2/4, Tomsk, 634021, Russia

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T. V. Menshchikova

T. V. Menshchikova

Tomsk State University, pr. Lenina 36, 634050, Tomsk, Russia

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Evgueni V. Chulkov

Evgueni V. Chulkov

Donostia International Physics Center (DIPC), Paseo Manuel de Lardizabal 4, 20018 San Sebastián/Donostia, Basque Country, Spain

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Stefan Blügel

Stefan Blügel

Forschungszentrum Jülich and JARA, Peter Grünberg Institut and Institute for Advanced Simulation, 52425 Jülich, Germany

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First published: 06 February 2015
Citations: 2

Summary

This chapter focuses on different two-dimensional (2D) topological insulators (TIs), and introduces the basic concepts through the example of graphene and discusses the HgTe/CdTe quantum wells. It shows that the actual material parameters that allow assessing the usefulness of a selected system for experimental purposes can only be obtained from ab initio calculations. Employing density functional theory (DFT), thin Bi and Sb films offer a nice opportunity to study both the evolution of a 2D TI to a trivial 3D semimetal and the transformation of a three-dimensional (3D) topological semimetal to a trivial 2D insulator. For the structurally more complicated compounds, such as Bi2Te3, GeBi2Te4, or Pb2Bi2Te5, the chapter also focuses on thin films and their topological properties as a function of film thickness. In particular, it describes the identification of stable phases with sufficiently large bandgaps, which allows the observation of topological protection in transport experiments.

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