Two‐Step Epitaxy of Gallium Nitride on (0001) Sapphire - Science and Technology of Interfaces - Wiley Online Library

I. Akasaki et al., Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and GaAlN Films Grown on Sapphire Substrate by MOVPE, J. Crystal Growth, 98 (1989), 209–219.
10.1016/0022-0248(89)90200-5
CAS Google Scholar
K. Lorenz et al., “Comparative Study of GaN and AlN Nucleation Layers and Their Role in Growth of GaN on Sapphire by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett., 77 (2000), 3391–3393.
10.1063/1.1328091
CAS Web of Science® Google Scholar
V. Narayanan et al., “GaN Epitaxy on (0001) Sapphire,” accepted for publication in Phil. Mag. A (2001).
Google Scholar
S. Mahajan, “Large Lattice Mismatch Epitaxy,” MRS Sym. Proceedings, Volume #410 (Warrendale, PA: Materials Research Society, 1996), 3-15.
Google Scholar
X.J. Ning et al., “Growth Defects in GaN Films on Sapphire: the Probable Origin of Threading Dislocations,” J. Materials Research, 11 (1996), 580–592.
10.1557/JMR.1996.0071
CAS Web of Science® Google Scholar
X. Wu et al., “Dislocation Generation in GaN Heteroepitaxy,” J. Crystal Growth, 189/190 (1998), 231-243.
Google Scholar
S. Mahajan, “Growth- and Processing-Induced Defects in Semiconductors,” Progress in Materials Science, 33 (1989), 1–84.
10.1016/0079-6425(89)90003-0
CAS Web of Science® Google Scholar
O.H. Nam, H.D. Bremser, T.S. Zheleva, and R.F. Davis, “Lateral Epitaxy of Low Defect Density GaN,” Appl. Phys. Lett., 71 (1997), 2638–2640.
10.1063/1.120164
CAS Web of Science® Google Scholar
R.F. Davis, T. Gehrke, K.J. Lanthicum, T.S. Zheleva, E.A. Preble, P. Rajagopal, C.A. Zorman and M. Mehregamy, “Pendeo-Epitaxial Growth of Thin Films of Gallium Nitride and Related Materials and Their Characterization,” J. Crystal Growth, 225 (2001), 134–140.
10.1016/S0022-0248(01)00836-3
CAS Web of Science® Google Scholar
S. Mahajan and G.Y. Chin, “Twin-Slip, Twin-Twin and Slip-Twin Interactions in Co-8 wt% Fe Alloy Single Crystals,” Acta Met., 21 (1973), 173–179.
10.1016/0001-6160(73)90059-X
CAS Web of Science® Google Scholar
K. Saarinen et al., “Gallium Vacancies and the Growth Stoichiometry of GaN Studied by Positron Annihilation,” Appl. Phys. Lett., 73 (1998), 3253–3255.
10.1063/1.122735
CAS Web of Science® Google Scholar
E.A. Beam III, S. Mahajan, and W.A. Bonner, “Replication and Annihilation of Dislocations During Homoepitaxial Growth of InPbyLPE,” Mats. Sci. Eng. B, 7 (1990), 83–101.
10.1016/0921-5107(90)90012-Z
Google Scholar

Science and Technology of Interfaces

Two-Step Epitaxy of Gallium Nitride on (0001) Sapphire

Summary

References

References

Information

About Wiley Online Library

Help & Support

Opportunities

Connect with Wiley

Two-Step Epitaxy of Gallium Nitride on (0001) Sapphire

Summary

References

References

Related

Information