Impact of Carrier Lateral Transport and Surface Recombination on the PL Efficiency of Mesas with Self-Organized Quantum Dots
M.V. Maximov
Institute of Materials Science, Department of Electrical Engineering, University of Wuppertal, Gauss-Strasse 20, D-42097 Wuppertal, Germany
Search for more papers by this authorB.V. Volovik
Institute of Materials Science, Department of Electrical Engineering, University of Wuppertal, Gauss-Strasse 20, D-42097 Wuppertal, Germany
Search for more papers by this authorC.M. Sotomayor Torres
Institute of Materials Science, Department of Electrical Engineering, University of Wuppertal, Gauss-Strasse 20, D-42097 Wuppertal, Germany
Search for more papers by this authorE.M. Ramushina
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorV.I. Skopina
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorE.M. Tanklevskaya
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorS.A. Gurevich
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorV.M. Ustinov
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorZh.I. Alferov
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorN.N. Ledentsov
Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany
Search for more papers by this authorD. Bimberg
Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany
Search for more papers by this authorM.V. Maximov
Institute of Materials Science, Department of Electrical Engineering, University of Wuppertal, Gauss-Strasse 20, D-42097 Wuppertal, Germany
Search for more papers by this authorB.V. Volovik
Institute of Materials Science, Department of Electrical Engineering, University of Wuppertal, Gauss-Strasse 20, D-42097 Wuppertal, Germany
Search for more papers by this authorC.M. Sotomayor Torres
Institute of Materials Science, Department of Electrical Engineering, University of Wuppertal, Gauss-Strasse 20, D-42097 Wuppertal, Germany
Search for more papers by this authorE.M. Ramushina
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorV.I. Skopina
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorE.M. Tanklevskaya
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorS.A. Gurevich
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorV.M. Ustinov
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorZh.I. Alferov
A. F. Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russia
Search for more papers by this authorN.N. Ledentsov
Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany
Search for more papers by this authorD. Bimberg
Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany
Search for more papers by this authorAbstract
Temperature-dependent photoluminescence study was made of mesa arrays with InAs–GaAs quantum dots. The smallest 0.2 μm mesas demonstrate bright photoluminescence at 300 K indicating that using quantum dots as active medium permits dramatic reduction of surface recombination.
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