Volume 179, Issue 2 pp. 469-473

Original Paper

An Investigation of I–V Characteristics of Au/n-GaAs Schottky Diodes after Hydrostatic Pressure

G. Çankaya,

G. Çankaya

Physics Department, Faculty of Arts and Sciences, Atatürk University, 25240 Erzurum, Turkey

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N. Uçar,

N. Uçar

Physics Department, Faculty of Arts and Sciences, Atatürk University, 25240 Erzurum, Turkey

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A. Türüt,

A. Türüt

Physics Department, Faculty of Arts and Sciences, Atatürk University, 25240 Erzurum, Turkey

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G. Çankaya,

G. Çankaya

Physics Department, Faculty of Arts and Sciences, Atatürk University, 25240 Erzurum, Turkey

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N. Uçar,

N. Uçar

Physics Department, Faculty of Arts and Sciences, Atatürk University, 25240 Erzurum, Turkey

Search for more papers by this author

A. Türüt,

A. Türüt

Physics Department, Faculty of Arts and Sciences, Atatürk University, 25240 Erzurum, Turkey

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First published: 07 July 2000

https://doi.org/10.1002/1521-396X(200006)179:2<469::AID-PSSA469>3.0.CO;2-U

Citations: 16

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Abstract

The experimental results have shown that the I–V characteristics of the diode shift to lower current values due to an increase of the Schottky barrier height with increasing hydrostatic pressure and the quality of the diode improves. It has been seen that the I–V characteristics after removal of the hydrostatic pressure have coincided with that at 1 kbar. Furthermore, the time-dependence of I–V characteristics of the Au/n-GaAs Schottky diodes 15, 30 and 45 days after the pressure has been removed have also coincided with that at 1 kbar. After the pressure treatments, this behavior of our diodes has been ascribed to the removal of fabrication-induced lateral inhomogeneities of the barrier height.

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Volume179, Issue2

June 2000

Pages 469-473

An Investigation of I–V Characteristics of Au/n-GaAs Schottky Diodes after Hydrostatic Pressure

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An Investigation of I–V Characteristics of Au/n-GaAs Schottky Diodes after Hydrostatic Pressure

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