Abstract
Nanoindentations have been made on (001) surfaces of InAs single crystals at room temperature and the indents formed observed by transmission electron microscopy. The loading and unloading curves of a Berkovitch indentor submitted to maximum loads ranging between 200 and 10000 μN, were analysed and compared to those previously obtained in GaAs. The plastic zone size was measured as a function of maximum load to determine the yield strength of InAs at room temperature. Finally, the arrangement of the dislocations at the edge of the plastic zone has been analysed and is compared to a previously reported arrangement for GaAs.
