Volume 229, Issue 2 pp. 1049-1053
Original Paper

Mechanism of Slow-Mode Degradation in II–VI Wide Bandgap Compound Based Blue-Green Laser Diodes

M. Adachi

M. Adachi

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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H. Yukitake

H. Yukitake

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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M. Watanabe

M. Watanabe

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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K. Koizumi

K. Koizumi

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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H.C. Lee

H.C. Lee

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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T. Abe

T. Abe

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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H. Kasada

H. Kasada

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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K. Ando

K. Ando

Electrical and Electronic Department, Tottori University, Koyama 4-101, Tottori 680-8552, Japan

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Abstract

Dislocation-free blue-green laser diodes of (ZnCd)Se/(ZnMg)(SSe) show a “slow-mode” degradation during device operation. This degradation is caused not by generation and propagation of macroscopic defects, but by microscopic-point defect reaction (marked enhancement in its concentration and resulting migration process) during high-density carrier-injection. It is also evidenced experimentally that the direct driving force on the marked defect reaction is derived from minority carrier injection induced e–h non-radiative recombination process at localized point defect centers in the p-type cladding layer of the LD devices.

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