Volume 229, Issue 2 pp. 1033-1038
Original Paper

E-Beam Longitudinally Pumped Laser Based on ZnCdSe/ZnSe MQW Structure Grown by MBE on ZnSe(001) Substrate

V.I. Kozlovsky

V.I. Kozlovsky

P.N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii pr., 119991 Moscow, Russia

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Yu.V. Korostelin

Yu.V. Korostelin

P.N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii pr., 119991 Moscow, Russia

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Yu.M. Popov

Yu.M. Popov

P.N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii pr., 119991 Moscow, Russia

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Ya.K. Skasyrsky

Ya.K. Skasyrsky

P.N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii pr., 119991 Moscow, Russia

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Yu.G. Sadofyev

Yu.G. Sadofyev

P.N. Lebedev Physical Institute, Russian Academy of Sciences, 53 Leninskii pr., 119991 Moscow, Russia

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Abstract

Electron beam longitudinally pumped laser based on 15 ZnCdSe/ZnSe QW periodic-gain structure grown by molecular beam epitaxy on ZnSe(001) substrate was studied. An output power of 0.3 W was achieved. The laser wavelength was in 518–536 nm range, being at the short wavelength side of the QW emission line at low excitation level. Such unusual feature was explained by the participation of excited QW levels in the creation of the optical gain.

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