Volume 229, Issue 2 pp. 1015-1018
Original Paper

Light Emission of a CdS(Cu)/CdS Thin-Film Diode

T. Abe

T. Abe

Department of Electrical and Electronic Engineering, Iwate University, Morioka 020-8551, Japan

Search for more papers by this author
J. Sato

J. Sato

Department of Electrical and Electronic Engineering, Iwate University, Morioka 020-8551, Japan

Search for more papers by this author
S. Ohashi

S. Ohashi

Department of Electrical and Electronic Engineering, Iwate University, Morioka 020-8551, Japan

Search for more papers by this author
M. Watanabe

M. Watanabe

Department of Electrical and Electronic Engineering, Iwate University, Morioka 020-8551, Japan

Search for more papers by this author
Y. Kashiwaba

Y. Kashiwaba

Department of Electrical and Electronic Engineering, Iwate University, Morioka 020-8551, Japan

Search for more papers by this author

Abstract

Thin-film diodes composed of Cu-doped p-type CdS (CdS(Cu)) and non-doped n-type CdS films (CdS(Cu)/CdS diode) were fabricated by an all-vacuum deposition process. The diodes showed good rectification characteristics and light emission of blue-green, green and red colors under a forward current at 77 K. The colors of light were changed by the Cu concentration, thickness of the Cu-diffused CdS layer and current density. It is thought that light emission of the diode was generated by a p-CdS(Cu)/n-CdS homojunction.

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.