Volume 202, Issue 2 pp. 827-833
Research Article

Self-Organized Growth of II–VI Wide Bandgap Quantum Dot Structures

Z. Zhu

Z. Zhu

Institute for Materials Research, Tohoku University, Sendai, Japan

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E. Kurtz

E. Kurtz

Institute for Materials Research, Tohoku University, Sendai, Japan

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K. Arai

K. Arai

Institute for Materials Research, Tohoku University, Sendai, Japan

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Y. F. Chen

Y. F. Chen

Institute for Materials Research, Tohoku University, Sendai, Japan

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D. M. Bagnall

D. M. Bagnall

Institute for Materials Research, Tohoku University, Sendai, Japan

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P. Tomashini

P. Tomashini

Institute for Materials Research, Tohoku University, Sendai, Japan

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F. Lu

F. Lu

Institute for Materials Research, Tohoku University, Sendai, Japan

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T. Sekiguchi

T. Sekiguchi

Institute for Materials Research, Tohoku University, Sendai, Japan

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T. Yao

T. Yao

Institute for Materials Research, Tohoku University, Sendai, Japan

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T. Yasuda

T. Yasuda

Photodynamics Research Center, RIKEN, Saitama, Japan

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Y. Segawa

Y. Segawa

Photodynamics Research Center, RIKEN, Saitama, Japan

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Abstract

We present our recent investigations on the self-organized growth and optical properties of quantum structures including CdSe quantum dots (QDs) embedded in ZnSe, ZnSe QDs in ZnS, and ZnO quantum pyramids. The self-organized mechanism is shown to play an important role in the formation of CdSe QDs on ZnSe(111). The ZnSe QDs are found to form on a 1 ML thick ZnSe wetting layer embedded in ZnS(100). The self-organized ZnO quantum pyramids form on ZnO(0001) buffer layers through preferred facet nucleation rather than strain-induced islanding.

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