Self-Assembled Visible-Bandgap II–VI Quantum Dots

This paper reports on the in-situ growth of II–VI quantum dots by molecular beam epitaxy. The dots are formed in highly strained (Zn, Cd)Se films of only a few monolayer thickness grown on ZnSe. The formation sets on when the Cd mole fraction exceeds 30%. The homogeneous width of the quantum dot excitons is on the μ eV-scale. We present data on the recombination and relaxation of carriers and excitons, their interaction with phonons as well as on stimulated emission in these zero-dimensional structures.