Volume 202, Issue 2 pp. 795-804
Research Article

Excitonic Effects in Cd1—xMnxSe Quantum Dots and Cd1—xMnxTe/ZnTe Quantum Wells

Y. Oka

Y. Oka

Research Institute for Scientific Measurements, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-77, Japan

CREST, JST, Kawaguchi, Saitama 332, Japan

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Abstract

Excitonic properties and dynamics are studied in nanostructure diluted magnetic semiconductors by transient luminescence and nonlinear optical spectroscopies. Quantum dots (QDs) of Cd1—xMnxSe show enhanced excitonic magnetic polaron effects with an increased binding energy of 20 meV. Quantum wells (QWs) of the Cd1—xMnxTe/ZnTe (x = 0 to 0.2) system display fast dephasing relaxation of the QW exciton with the dephasing time T2 of 360 to 450 fs, which indicates the fast dephasing process of free excitons in the strained QWs. In the asymmetric double QWs, the tunneling time of carriers through the intermediate barrier is determined as 0.01 to 106 ps for barrier thicknesses of 40 to 320 Å. An enhanced excitonic magnetic polaron binding energy, the rapid dephasing of free excitons and tunneling of carriers are the characteristic properties of the QW excitons in the diluted magnetic semiconductor nanostructures.

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