Reflectance difference (RD) spectra are calculated for various semiconductor surfaces and interfaces to clarify the spectra origin. It is shown that RD spectra originate from surface-state-related resonance transitions and inner bulk-like transitions for GaAs (001) surfaces and the contribution degrees of both transitions to total spectra depend on the localization nature of electronic states. For GaAs/ZnSe heterovalent interfaces, the RD spectra originate from GaAs bulk-state transitions, which are symmetry broken by the presence of the interface, and the vacancy-related transitions in GaSe interface layers. These results are compared with experimental observations.

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Volume202, Issue2

August 1997

Pages 741-749

Reflectance Difference Spectra of Semiconductor Surfaces and Interfaces

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Reflectance Difference Spectra of Semiconductor Surfaces and Interfaces

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