Original Paper

Photoelectrical Properties of Thermally Deposited Amorphous As₅₀Se₅₀ Films

M. Iovu

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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S. Shutov,

S. Shutov

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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S. Rebeja,

S. Rebeja

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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E. Kolomeyko,

E. Kolomeyko

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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M. Iovu,

M. Iovu

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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S. Shutov,

S. Shutov

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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S. Rebeja,

S. Rebeja

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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E. Kolomeyko,

E. Kolomeyko

Institute of Applied Physics, Center of Optoelectronics, Academy of Sciences of Moldova, 1 Akademiei Str., MD-2028 Kishinev, Moldova

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First published: 29 January 1999

https://doi.org/10.1002/(SICI)1521-3951(199804)206:2<583::AID-PSSB583>3.0.CO;2-B

Citations: 6

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Abstract

The excitation spectrum, steady-state and transient characteristics of photoconductivity in amorphous thermally deposited chalcogenide AsSe films were studied. Besides the excitation of nonequilibrium holes by optical transitions from the valence band tail to the conduction band an additional channel of hole generation from a donor-like defect state with energy E_d — E_v = 1.5 eV was revealed. The defect is associated with the presence of homopolar As–As bonds. The steady-state and transient photoconductivity characteristics are adequately interpreted in the frame of a model, in which transport and recombination of nonequilibrium holes are controlled by exponentially distributed hole traps with the distribution parameter kT* = 0.039 eV.

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Volume206, Issue2

April 1998

Pages 583-592

Photoelectrical Properties of Thermally Deposited Amorphous As₅₀Se₅₀ Films

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Photoelectrical Properties of Thermally Deposited Amorphous As₅₀Se₅₀ Films