We have investigated the preparation conditions of highly oriented TiN(200) films on Si(100) and the growth behavior of Al(111) caused by interposing Al₃Ti(112) between Al and TiN(200). When TiN films are sputtered on Si(100) at 400 °C with an N₂ flow ratio of 12%, stoichiometric TiN films with a single oriented (200) plane are obtained, having the same resistivity and lattice constant as the bulk material. The interposition of stoichiometric Al₃Ti(112) as an interlayer makes possible the structure Al(111)/Al₃Ti(112)/TiN(200)/Si(100); the reason is the small lattice mismatch at each interface. © 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(9): 46–53, 1998

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Volume81, Issue9

September 1998

Pages 46-53

Orientational growth of Al(111) caused by interposing Al₃Ti layer on a highly oriented TiN(200) film

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Orientational growth of Al(111) caused by interposing Al₃Ti layer on a highly oriented TiN(200) film