Volume 8, Issue 7 pp. 465-470
Research Article

Oxygen-crosslinked polysilane: the new class of Si-related material for electroluminescent devices

Toshiro Hiraoka

Corresponding Author

Toshiro Hiraoka

Materials and Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

Materials and Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, JapanSearch for more papers by this author
Yutaka Majima

Yutaka Majima

Materials and Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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Shinji Murai

Shinji Murai

Materials and Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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Yoshihiko Nakano

Yoshihiko Nakano

Materials and Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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Shuzi Hayase

Shuzi Hayase

Materials and Devices Research Laboratories, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan

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Abstract

The preparation and optical properties of the novel silicon-related material named oxygen-crosslinked polysilane were investigated. The oxygen-crosslinked polysilane was prepared by the thermal annealing of the precursor polysilane bearing alkoxyl groups. The photoluminescence consisting of a broad visible band at about 440 nm and a relatively sharp band at about 360 nm was observed at room temperature. The relative intensities of the visible emission were changed during the crosslinking. The visible emission was greatly affected by the steric hindrance of the alkoxyl groups of the precursor. The visible electroluminescene (EL) was also observed uniformly from the EL cell consisting of the oxygen-crosslinked polysilane film sandwiched between A1 electrode and indium-tin-oxide (ITO) electrode. The current densities of the EL cell increased with an increase in the oxygen-crosslinking. © 1997 John Wiley & Sons, Ltd.

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