Fabrication of p–n junction diodes from phthalocyanine and electropolymerized perylene derivatives

Perylene derivative films doped with metal ion were deposited on indium tin oxide (ITO)-coated glass electrodes by electrodeposition from solutions of N,N′-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide (hph-PTC) and CaCl₂, PbCl₂, ZnCl₂ or CoBr₂ as a supporting electrolyte in N,N-dimethylformamide (DMF). The p–n junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p–n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca²⁺ showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p–n junction diodes. © 1998 John Wiley & Sons, Ltd.