Volume 2020, Issue 1 4258307
Corrigendum
Open Access

Corrigendum to “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation”

Milić Pejović

Corresponding Author

Milić Pejović

Faculty of Electronic Engineering, University of Niš, Aleksandra Medvedeva 14, 18000 Niš, Serbia ni.ac.rs

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Olivera Ciraj-Bjelac

Olivera Ciraj-Bjelac

Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11001 Belgrade, Serbia bg.ac.rs

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Milojko Kovačević

Milojko Kovačević

Vinča Institute of Nuclear Sciences, University of Belgrade, P.O. Box 522, 11001 Belgrade, Serbia bg.ac.rs

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Zoran Rajović

Zoran Rajović

Electric Power Industry of Serbia, 11000 Belgrade, Serbia eps.rs

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Gvozden Ilić

Gvozden Ilić

Electric Power Industry of Serbia, 11000 Belgrade, Serbia eps.rs

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First published: 31 August 2020

In the article titled “Sensitivity of P-Channel MOSFET to X- and Gamma-Ray Irradiation” [1], there was an error in the drawing of Figure 2, which should be corrected as follows:

Details are in the caption following the image
Electronic scheme for reader circuit measurement.

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