Volume 78, Issue 10 pp. 570-577
research papers

Ab initio calculation of mechanical, electronic and optical characteristics of chalcogenide perovskite BaZrS3 at high pressures

Zhong Rong

Corresponding Author

Zhong Rong

Jiangxi Modern Polytechnic College, Nanchang, 330095 People's Republic of China

Zhong Rong, e-mail: [email protected]Search for more papers by this author
Chen Zhi

Chen Zhi

Jiangxi Modern Polytechnic College, Nanchang, 330095 People's Republic of China

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Cao Jun

Cao Jun

Jiangxi Modern Polytechnic College, Nanchang, 330095 People's Republic of China

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First published: 27 September 2022

Abstract

A theoretical examination of the structural, elastic, electronic and optical properties of the chalcogenide perovskite BaZrS3 under pressures of 0 and 20 GPa was performed using density functional theory ab initio calculations. The lattice constants of the BaZrS3 structure are well reproduced from our first-principles calculations and are in excellent agreement with experimental measurements. Moreover, the values of mechanical parameters, such as the elastic constant, increased under applied pressure. The electronic parameters indicate that the chalcogenide perovskite BaZrS3 has a direct band gap of 1.75 eV. To understand the optical response, the real and imaginary parts of the dielectric function of BaZrS3 have been studied, as well as the absorption coefficient, reflectivity and extinction coefficient. The induced pressure is found to enhance the optical parameters in the different energy regions. Our calculations predict that the studied chalcogenide perovskite BaZrS3 could be a candidate in photovoltaic, optoelectronic and mechanical applications.

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