Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature
Ji-Hoon Park
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorAng-Yu Lu
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorPin-Chun Shen
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorBong Gyu Shin
Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
Search for more papers by this authorHaozhe Wang
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorNannan Mao
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorRenjing Xu
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138 USA
Search for more papers by this authorSoon Jung Jung
Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
Search for more papers by this authorDonhee Ham
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138 USA
Search for more papers by this authorKlaus Kern
Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
Institut de Physique, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Search for more papers by this authorYimo Han
Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005 USA
Search for more papers by this authorCorresponding Author
Jing Kong
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
E-mail: [email protected]
Search for more papers by this authorJi-Hoon Park
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorAng-Yu Lu
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorPin-Chun Shen
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorBong Gyu Shin
Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
Search for more papers by this authorHaozhe Wang
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorNannan Mao
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Search for more papers by this authorRenjing Xu
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138 USA
Search for more papers by this authorSoon Jung Jung
Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
Search for more papers by this authorDonhee Ham
School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138 USA
Search for more papers by this authorKlaus Kern
Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany
Institut de Physique, École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
Search for more papers by this authorYimo Han
Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005 USA
Search for more papers by this authorCorresponding Author
Jing Kong
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139 USA
E-mail: [email protected]
Search for more papers by this authorAbstract
The large-area synthesis of high-quality MoS2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS2 with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low-substrate temperature, the MOCVD-grown MoS2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm2 V−1 s−1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS2 growth process via a geometric model of the MoS2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.
Conflict of Interest
The authors declare no conflict of interest.
Supporting Information
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