Volume 21, Issue 9 2410001
Review

2D MXenes: Synthesis, Properties, and Applications in Silicon-Based Optoelectronic Devices

Wei Li

Wei Li

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Zhiyuan Xu

Zhiyuan Xu

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Yu Yan

Yu Yan

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Qianfeng Gao

Qianfeng Gao

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Yaya Song

Yaya Song

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Taiqiang Wang

Taiqiang Wang

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Hongyu Dun

Hongyu Dun

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Mingyu Yang

Mingyu Yang

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Qian Huang

Corresponding Author

Qian Huang

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

E-mail: [email protected]; [email protected]

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Xiaodan Zhang

Xiaodan Zhang

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Ying Zhao

Ying Zhao

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

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Guofu Hou

Corresponding Author

Guofu Hou

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Tianjin, 300350 China

State Key Laboratory of Photovoltaic Materials and Solar Cells, Tianjin, 300350 China

Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin, 300350 China

Tianjin Key Laboratory of Efficient Utilization of Solar Energy, Tianjin, 300350 China

E-mail: [email protected]; [email protected]

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First published: 16 January 2025
Citations: 3

Abstract

MXenes, a rapidly emerging class of 2D transition metal carbides, nitrides, and carbonitrides, have attracted significant attention for their outstanding properties, including high electrical conductivity, tunable work function, and solution processability. These characteristics have made MXenes highly versatile and widely adopted in the next generation of optoelectronic devices, such as perovskite and organic solar cells. However, their integration into silicon-based optoelectronic devices remains relatively underexplored, despite silicon's dominance in the semiconductor industry. In this review, a timely summary of the recent progress in utilizing Ti-based MXenes, particularly Ti3C2Tx, in silicon-based optoelectronic devices is provided. The composition, synthesis methods, and key properties of MXenes that contribute to their potential for enhanced device performance are focused on. Furthermore, the latest advancements in MXene applications in silicon-based solar cells and photodetectors are discussed from fundamental and applied perspectives. Finally, the key challenges and future opportunities for the integration of MXenes in silicon-based optoelectronic devices are outlined.

Conflict of Interest

The authors declare no conflict of interest.

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