A Droplet Method for Synthesis of Multiclass Ultrathin Metal Halides
Jin Tang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorFeixiang Ge
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJinlian Chen
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorDawei Zhou
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorGuixiang Zhan
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJing Liu
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJiaxiao Yuan
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorXinyu Shi
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorPeiyi Zhao
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorXinlin Fan
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorYu Su
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorZicong Liu
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJiahao He
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJiaqi Tang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorChenyang Zha
Institute of Applied Physics and Materials Engineering (IAPME), Zhuhai UM Science & Technology Research Institute (ZUMRI), University of Macau, Taipa, Macau SAR, 999078 China
Search for more papers by this authorCorresponding Author
Linghai Zhang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
E-mail: [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Xuefen Song
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
E-mail: [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Lin Wang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
E-mail: [email protected]; [email protected]; [email protected]
Search for more papers by this authorJin Tang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorFeixiang Ge
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJinlian Chen
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorDawei Zhou
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorGuixiang Zhan
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJing Liu
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJiaxiao Yuan
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorXinyu Shi
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorPeiyi Zhao
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorXinlin Fan
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorYu Su
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorZicong Liu
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJiahao He
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorJiaqi Tang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
Search for more papers by this authorChenyang Zha
Institute of Applied Physics and Materials Engineering (IAPME), Zhuhai UM Science & Technology Research Institute (ZUMRI), University of Macau, Taipa, Macau SAR, 999078 China
Search for more papers by this authorCorresponding Author
Linghai Zhang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
E-mail: [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Xuefen Song
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
E-mail: [email protected]; [email protected]; [email protected]
Search for more papers by this authorCorresponding Author
Lin Wang
School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816 China
E-mail: [email protected]; [email protected]; [email protected]
Search for more papers by this authorAbstract
2D metal halides have attracted increasing research attention in recent years; however, it is still challenging to synthesize them via liquid-phase methods. Here it is demonstrated that a droplet method is simple and efficient for the synthesis of multiclass 2D metal halides, including trivalent (BiI3, SbI3), divalent (SnI2, GeI2), and monovalent (CuI) ones. In particular, 2D SbI3 is first experimentally achieved, of which the thinnest thickness is ≈6 nm. The nucleation and growth of these metal halide nanosheets are mainly determined by the supersaturation of precursor solutions that are dynamically varying during the solution evaporation. After solution drying, the nanosheets can fall on the surface of many different substrates, which further enables the feasible fabrication of related heterostructures and devices. With SbI3/WSe2 being a good demonstration, the photoluminescence intensity and photo responsivity of WSe2 is obviously enhanced after interfacing with SbI3. The work opens a new pathway for 2D metal halides toward widespread investigation and applications.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available in the supplementary material of this article.
Supporting Information
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smll202301573-sup-0001-SuppMat.pdf630.3 KB | Supporting Information |
Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
References
- 1C. Cong, J. Shang, L. Niu, L. Wu, Y. Chen, C. Zou, S. Feng, Z.-J. Qiu, L. Hu, P. Tian, Z. Liu, T. Yu, R. Liu, Adv. Opt. Mater. 2017, 5, 1700609.
- 2R. Ai, X. Guan, J. Li, K. Yao, P. Chen, Z. Zhang, X. Duan, X. Duan, ACS Nano 2017, 11, 3413.
- 3Z. Lin, Y. Ding, W. Zheng, Y. Zhu, S. Zhu, F. Huang, Small 2021, 17, 2005368.
- 4A. A. Suleiman, P. Huang, B. Jin, J. Jiang, X. Zhang, X. Zhou, T. Zhai, Adv. Electron. Mater. 2020, 6, 2000284.
- 5F. Wang, Z. Zhang, Y. Zhang, A. Nie, W. Zhao, D. Wang, F. Huang, T. Zhai, Adv. Mater. 2020, 32, 2001979.
- 6H. Xiao, T. Liang, M. Xu, Small 2019, 15, 1901767.
- 7Y. Sun, Y. Yin, M. Pols, J. Zhong, Z. Huang, B. Liu, J. Liu, W. Wang, H. Xie, G. Zhan, Z. Zhou, W. Zhang, P. Wang, C. Zha, X. Jiang, Y. Ruan, C. Zhu, G. Brocks, X. Wang, L. Wang, J. Wang, S. Tao, W. Huang, Adv. Mater. 2020, 32, 2002392.
- 8Y. Sun, Z. Zhou, Z. Huang, J. Wu, L. Zhou, Y. Cheng, J. Liu, C. Zhu, M. Yu, P. Yu, W. Zhu, Y. Liu, J. Zhou, B. Liu, H. Xie, Y. Cao, H. Li, X. Wang, K. Liu, X. Wang, J. Wang, L. Wang, W. Huang, Adv. Mater. 2019, 31, 1806562.
- 9Q. Wei, J. Chen, P. Ding, B. Shen, J. Yin, F. Xu, Y. Xia, Z. Liu, ACS Appl. Mater. Interfaces 2018, 10, 21527.
- 10Q. Q. Yuan, F. Zheng, Z. Q. Shi, Q. Y. Li, Y. Y. Lv, Y. Chen, P. Zhang, S. C. Li, Adv. Sci. 2021, 8, 2100009.
- 11A. Liu, H. Zhu, M. G. Kim, J. Kim, Y. Y. Noh, Adv. Sci. 2021, 8, 2100546.
- 12Z. Zhang, M. Zhao, C. Hu, L. Xiong, X. Zhu, T. Zhai, W. Liang, J. Phys. Chem. C 2022, 126, 20920.
- 13V. Gottschalch, G. Benndorf, S. Selle, E. Krüger, S. Blaurock, M. Kneiß, M. Bar, C. Sturm, S. Merker, T. Höche, M. Grundmann, H. Krautscheid, J. Cryst. Growth 2021, 570, 126218.
- 14Q. Song, C. A. Occhialini, E. Ergecen, B. Ilyas, D. Amoroso, P. Barone, J. Kapeghian, K. Watanabe, T. Taniguchi, A. S. Botana, S. Picozzi, N. Gedik, R. Comin, Nature 2022, 602, 601.
- 15J. Wang, Z. Ahmadi, D. Lujan, J. Choe, T. Taniguchi, K. Watanabe, X. Li, J. E. Shield, X. Hong, Adv. Sci. 2023, 10, 2203548.
- 16L. Niu, Y. Li, M. Zhao, Z. Liu, M. Zhang, C. Ding, Z. Dou, Y. She, K. Zhang, Z. Luo, L. Zhang, S. Wang, Adv. Funct. Mater. 2022, 32, 2202580.
- 17M. Zhao, S. Yang, K. Zhang, L. Zhang, P. Chen, S. Yang, Y. Zhao, X. Ding, X. Zu, Y. Li, Y. Zhao, L. Qiao, T. Zhai, Nanomicro Lett 2021, 13, 165.
- 18J. Li, X. Guan, C. Wang, H. C. Cheng, R. Ai, K. Yao, P. Chen, Z. Zhang, X. Duan, X. Duan, Small 2017, 13, 1701034.
- 19C. Lyu, L. Zhang, X. Zhang, H. Zhang, H. Xie, J. Zhang, Y. Liu, Y. Liu, R. Wu, J. Zhang, C. Zha, W. Wang, Z. Wan, B. Li, C. Zhu, H. Ma, X. Duan, L. Wang, Adv. Mater. 2023, 35, 2207895.
- 20Y. Wang, L. Gan, J. Chen, R. Yang, T. Zhai, Sci. Bull. 2017, 62, 1654.
- 21M. Li, D. Liu, H. Cheng, L. Peng, M. Zu, J. Mater. Chem. C 2020, 8, 8538.
- 22X. Wan, K. Chen, J. Xu, Small 2014, 10, 4443.
- 23Z. Huang, Y. Sun, Z. Zhang, Z. Zhou, B. Liu, J. Zhong, W. Zhang, G. Ouyang, J. Zhang, L. Wang, W. Huang, J. Mater. Sci. 2020, 55, 10656.
- 24J. Yuan, X. Zhang, D. Zhou, F. Ge, J. Zhong, S. Zhao, Z. Ou, G. Zhan, X. Zhang, C. Li, J. Tang, Q. Bai, J. Zhang, C. Zhu, T. Wang, L. Ruan, C. Zhu, X. Song, W. Huang, L. Wang, Angew. Chem., Int. Ed. 2023, 135, 202218546.
10.1002/ange.202218546 Google Scholar
- 25Z. Zhu, C. Zhu, L. Yang, Q. Chen, L. Zhang, J. Dai, J. Cao, S. Zeng, Z. Wang, Z. Wang, W. Zhang, J. Bao, L. Yang, Y. Yang, B. Chen, C. Yin, H. Chen, Y. Cao, H. Gu, J. Yan, N. Wang, G. Xing, H. Li, X. Wang, S. Li, Z. Liu, H. Zhang, L. Wang, X. Huang, W. Huang, Nat. Mater. 2022, 21, 1042.
- 26J. Zhang, Y. Huang, Z. Tan, T. Li, Y. Zhang, K. Jia, L. Lin, L. Sun, X. Chen, Z. Li, C. Tan, J. Zhang, L. Zheng, Y. Wu, B. Deng, Z. Chen, Z. Liu, H. Peng, Adv. Mater. 2018, 30, 1803194.
- 27W. Zheng, Z. Zhang, R. Lin, K. Xu, J. He, F. Huang, Adv. Electronic. Mater. 2016, 2, 1600291.
- 28J. Y. Zheng, H. G. Manning, Y. Zhang, J. J. Wang, F. Purcell-Milton, A. Pokle, S. B. Porter, C. Zhong, J. Li, R. O'Reilly Meehan, R. Enright, Y. K. Gun'ko, V. Nicolosi, J. J. Boland, S. Sanvito, J. F. Donegan, Sci. Rep. 2019, 9, 11738.
- 29Y. Wang, Y. Shi, Z. Zhang, C. Carlos, C. Zhang, K. Bhawnani, J. Li, J. Wang, P. M. Voyles, I. Szlufarska, X. Wang, Chem. Mater. 2019, 31, 9040.
- 30V. K. LaMer, R. H. Dinegar, J. Am. Chem. Soc. 1950, 72, 4847.
- 31K. Yao, P. Chen, Z. Zhang, J. Li, R. Ai, H. Ma, B. Zhao, G. Sun, R. Wu, X. Tang, B. Li, J. Hu, X. Duan, X. Duan, npj 2D Mater. Appl. 2018, 2, 16.
- 32C. Zhang, L. Cai, R. Tu, Y. Zheng, B.-W. Li, S. Zhang, Appl. Surf. Sci. 2022, 604, 154652.
- 33A. Saitoh, T. Komatsu, T. Karasawa, H. Ohtake, T. Suemoto, Phys. Status Solidi B 2001, 226, 357.
- 34A. Saitoh, J. Raman Spectrosc. 2007, 38, 537.
- 35P. Zhang, F. Yang, M. A. Kamarudin, C. H. Ng, G. Kapil, T. Ma, S. Hayase, ACS Appl. Mater. Interfaces 2018, 10, 29630.
- 36M. Fu, P. Tamarat, J. B. Trebbia, M. I. Bodnarchuk, M. V. Kovalenko, J. Even, B. Lounis, Nat. Commun. 2018, 9, 3318.
- 37Z. Shao, S. You, X. Guo, J. Xiao, J. Liu, F. Song, H. Xie, J. Sun, H. Huang, Results Phys 2022, 34, 105326.
- 38S. Sinha, T. Zhu, A. France-Lanord, Y. Sheng, J. C. Grossman, K. Porfyrakis, J. H. Warner, Nat. Commun. 2020, 11, 823.
- 39T. Ye, J. Li, D. Li, Small 2019, 15, 1902424.
- 40S. Dufferwiel, T. P. Lyons, D. D. Solnyshkov, A. A. P. Trichet, A. Catanzaro, F. Withers, G. Malpuech, J. M. Smith, K. S. Novoselov, M. S. Skolnick, D. N. Krizhanovskii, A. I. Tartakovskii, Nat. Commun. 2018, 9, 4797.
- 41L. Zhang, F. Zhou, X. Zhang, S. Yang, B. Wen, H. Yan, T. Yildirim, X. Song, Q. Yang, M. Tian, N. Wan, H. Song, J. Pei, S. Qin, J. Zhu, S. Wageh, O. A. Al-Hartomy, A. G. Al-Sehemi, H. Shen, Y. Liu, H. Zhang, Adv. Mater. 2023, 35, 2206212.
- 42Y. Chen, Z. Liu, J. Li, X. Cheng, J. Ma, H. Wang, D. Li, ACS Nano 2020, 14, 10258.
- 43X. Zong, H. Hu, G. Ouyang, J. Wang, R. Shi, L. Zhang, Q. Zeng, C. Zhu, S. Chen, C. Cheng, B. Wang, H. Zhang, Z. Liu, W. Huang, T. Wang, L. Wang, X. Chen, Light Sci Appl 2020, 9, 114.
- 44Y. Zhang, K. Ma, C. Zhao, W. Hong, C. Nie, Z. J. Qiu, S. Wang, ACS Nano 2021, 15, 4405.
- 45Y. Sun, L. Jiang, Z. Wang, Z. Hou, L. Dai, Y. Wang, J. Zhao, Y. H. Xie, L. Zhao, Z. Jiang, W. Ren, G. Niu, ACS Nano 2022, 16, 20272.
- 46H. Ma, K. Huang, R. Wu, Z. Zhang, J. Li, B. Zhao, C. Dai, Z. Huang, H. Zhang, X. Yang, B. Li, Y. Liu, X. Duan, X. Duan, InfoMat 2020, 3, 222.
10.1002/inf2.12157 Google Scholar
- 47Z. Luo, M. Yang, D. Wu, Z. Huang, W. Gao, M. Zhang, Y. Zhou, Y. Zhao, Z. Zheng, J. Li, Small Methods 2022, 6, 2200583.
- 48P. Luo, F. Zhuge, F. Wang, L. Lian, K. Liu, J. Zhang, T. Zhai, ACS Nano 2019, 13, 9028.
- 49H. Wang, Z. Li, D. Li, X. Xu, P. Chen, L. Pi, X. Zhou, T. Zhai, Adv. Funct. Mater. 2021, 31, 2106105.
- 50P. Luo, F. Wang, J. Qu, K. Liu, X. Hu, K. Liu, T. Zhai, Adv. Funct. Mater. 2020, 31, 2008351.
- 51A. Varghese, D. Saha, K. Thakar, V. Jindal, S. Ghosh, N. V. Medhekar, S. Ghosh, S. Lodha, Nano Lett. 2020, 20, 1707.
- 52C. Tan, S. Yin, J. Chen, Y. Lu, W. Wei, H. Du, K. Liu, F. Wang, T. Zhai, L. Li, ACS Nano 2021, 15, 8328.
- 53G. Tong, M. Jiang, D. Y. Son, L. K. Ono, Y. Qi, Adv. Funct. Mater. 2020, 30, 2002526.