Highly Linear and Symmetric Synaptic Memtransistors Based on Polarization Switching in Two-Dimensional Ferroelectric Semiconductors
Yitong Chen
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorDingwei Li
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorHuihui Ren
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorYingjie Tang
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorKun Liang
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorYan Wang
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorFanfan Li
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorChunyan Song
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorJiaqi Guan
Instrumentation and Service Centre for Physical Sciences, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorZhong Chen
Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorXingyu Lu
Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorGuangwei Xu
School of Microelectronics, University of Science and Technology of China, Hefei, 230026 China
Search for more papers by this authorWenbin Li
Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024 China
Search for more papers by this authorShi Liu
School of Science, Westlake University, Hangzhou, Zhejiang, 310024 China
Search for more papers by this authorCorresponding Author
Bowen Zhu
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024 China
E-mail: [email protected]
Search for more papers by this authorYitong Chen
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorDingwei Li
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorHuihui Ren
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorYingjie Tang
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorKun Liang
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorYan Wang
School of Materials and Engineering, Zhejiang University, Hangzhou, 310027 China
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorFanfan Li
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorChunyan Song
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorJiaqi Guan
Instrumentation and Service Centre for Physical Sciences, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorZhong Chen
Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorXingyu Lu
Instrumentation and Service Centre for Molecular Sciences, Westlake University, Hangzhou, 310024 China
Search for more papers by this authorGuangwei Xu
School of Microelectronics, University of Science and Technology of China, Hefei, 230026 China
Search for more papers by this authorWenbin Li
Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024 China
Search for more papers by this authorShi Liu
School of Science, Westlake University, Hangzhou, Zhejiang, 310024 China
Search for more papers by this authorCorresponding Author
Bowen Zhu
Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024 China
Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, 310024 China
E-mail: [email protected]
Search for more papers by this authorAbstract
Brain-inspired neuromorphic computing hardware based on artificial synapses offers efficient solutions to perform computational tasks. However, the nonlinearity and asymmetry of synaptic weight updates in reported artificial synapses have impeded achieving high accuracy in neural networks. Here, this work develops a synaptic memtransistor based on polarization switching in a two-dimensional (2D) ferroelectric semiconductor (FES) of α-In2Se3 for neuromorphic computing. The α-In2Se3 memtransistor exhibits outstanding synaptic characteristics, including near-ideal linearity and symmetry and a large number of programmable conductance states, by taking the advantages of both memtransistor configuration and electrically configurable polarization states in the FES channel. As a result, the α-In2Se3 memtransistor-type synapse reaches high accuracy of 97.76% for digit patterns recognition task in simulated artificial neural networks. This work opens new opportunities for using multiterminal FES memtransistors in advanced neuromorphic electronics.
Conflict of Interest
The authors declare no conflict of interest.
Open Research
Data Availability Statement
The data that support the findings of this study are available from the corresponding author upon reasonable request.
Supporting Information
| Filename | Description |
|---|---|
| smll202203611-sup-0001-SuppMat.pdf6.6 MB | Supporting Information |
Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.
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