Volume 14, Issue 19 1704007
Full Paper

Interfacial Passivation of the p-Doped Hole-Transporting Layer Using General Insulating Polymers for High-Performance Inverted Perovskite Solar Cells

Fan Zhang

Fan Zhang

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

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Jun Song

Corresponding Author

Jun Song

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

E-mail: [email protected], [email protected], [email protected]Search for more papers by this author
Rui Hu

Rui Hu

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

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Yuren Xiang

Yuren Xiang

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

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Junjie He

Junjie He

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

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Yuying Hao

Yuying Hao

College of Physics and Optoelectronics Engineering, Taiyuan University of Technology, Taiyuan, 030024 P. R. China

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Jiarong Lian

Jiarong Lian

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

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Bin Zhang

Corresponding Author

Bin Zhang

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

National Experimental Demonstration Center for Materials Science and Engineering, Jiangsu Key Laboratory of Environmentally Friendly Polymeric Materials, School of Materials Science & Engineering, Changzhou University, Changzhou, 213164 P. R. China

E-mail: [email protected], [email protected], [email protected]Search for more papers by this author
Pengju Zeng

Pengju Zeng

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

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Junle Qu

Corresponding Author

Junle Qu

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060 P. R. China

E-mail: [email protected], [email protected], [email protected]Search for more papers by this author
First published: 11 April 2018
Citations: 116

Abstract

Organic–inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy-loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p-doped hole transport layers (HTLs), since the F4-TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open-circuit voltages (VOC). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the VOC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs.

Conflict of Interest

The authors declare no conflict of interest.

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