Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors
Corresponding Author
Fatemeh Gholamrezaie
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.Search for more papers by this authorAnne-Marije Andringa
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Search for more papers by this authorW. S. Christian Roelofs
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorAlfred Neuhold
Institute of Solid State Physics, Graz University of Technology, Petersgasse 16A, 8010 Graz, Austria
Search for more papers by this authorMartijn Kemerink
Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorPaul W. M. Blom
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Holst Centre/TNO, High Tech Campus 34, 5656 AE, Eindhoven, The Netherlands
Search for more papers by this authorCorresponding Author
Dago M. de Leeuw
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.Search for more papers by this authorCorresponding Author
Fatemeh Gholamrezaie
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.Search for more papers by this authorAnne-Marije Andringa
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Search for more papers by this authorW. S. Christian Roelofs
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorAlfred Neuhold
Institute of Solid State Physics, Graz University of Technology, Petersgasse 16A, 8010 Graz, Austria
Search for more papers by this authorMartijn Kemerink
Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
Search for more papers by this authorPaul W. M. Blom
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Holst Centre/TNO, High Tech Campus 34, 5656 AE, Eindhoven, The Netherlands
Search for more papers by this authorCorresponding Author
Dago M. de Leeuw
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.Search for more papers by this authorGraphical Abstract
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.
References
- 1 G. H. Gelinck, H. E. A. Huitema, E. Van Veenendaal, E. Cantatore, L. Schrijnemakers, J. B. P. H. Van der Putten, T. C. T. Geuns, M. Beenhakkers, J. B. Giesbers, B. H. Huisman, E. J. Meijer, E. M. Benito, F. J. Touwslager, A. W. Marsman, B. J. E. Van Rens, D. M. De Leeuw, Nat. Mater. 2004, 3, 106.
- 2 E. Cantatore, T. C. T. Geuns, G. H. Gelinck, E. van Veenendaal, A. F. A. Gruijthuijsen, L. Schrijnemakers, S. Drews, D. M. de Leeuw, IEEE J. Solid St. Circ. 2007, 42, 84.
- 3 K. Myny, S. Steudel, P. Vicca, M. J. Beenhakkers, N. van Aerle, G. H. Gelinck, J. Genoe, W. Dehaene, P. Heremans, Solid St. Elect. 2009, 53, 1220.
- 4 S. De Vusser, J. Genoe, P. Heremans, IEEE Trans. Elect. Dev. 2006, 53, 601.
- 5 J. R. Hauser, IEEE Trans. Educ. 1993, 36, 363.
- 6 M. R. MacPherson, Appl. Phys. Lett. 1971, 18, 502.
- 7 T. Mizuno, J. Okamura, A. Toriumi, IEEE Trans. Elect. Dev. 1994, 41, 2216.
- 8 E. Cantatore, T. C. T. Geuns, G. H. Gelinck, E. van Veenendaal, A. F. A. Gruijthuijsen, L. Schrijnemakers, S. Drews, D. M. de Leeuw, IEEE J. Solid St. Circ. 2007, 42, 84.
- 9 I. Nausieda, K. K. Ryu, D. Da He, A. I. Akinwande, V. Bulovic, C. G. Sodini, IEEE Trans. Elect. Dev. 2010, 57, 1003.
- 10 H. W. Zan, W. T. Chen, C. C. Yeh, H. W. Hsueh, C. C. Tsai, H.F. Meng, Appl. Phys. Lett. 2011, 98, 153506.
- 11 M. Spijkman, E. C. P. Smits, P. W. M. Blom, D. M. de Leeuw, Y. B. S. Côme, S. Setayesh, E. Cantatore, Appl. Phys. Lett. 2008, 92, 143304.
- 12 S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogaw, Y. Iwasa, Nat. Mater. 2004, 3, 317.
- 13 K. P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D. J. Gundlach, B. Batlogg, A. N. Rashid, G. Schitter, J. Appl. Phys. 2004, 96, 6431.
- 14 Y. Jang, J. H. Cho, D.H. Kim, Y. D. Park, M. Hwang, K. Cho, Appl. Phys. Lett. 2007, 90, 132104.
- 15 J. Takeya, T. Nishikawa, T. Takenobu, S. Kobayashi, Y. Iwasa, T. Minani, C. Goldmann, C. Krellner, B. Batlogg, Appl. Phys. Lett. 2004, 85, 5078.
- 16 Y. Chung, E. Verploegen, A. Vailionis, Y. Sun, Y. Nishi, B. Murmann, Z. Bao, Nano Lett. 2011, 11, 1161.
- 17 S. K. Possanner, K. Zojer, P. Pacher, E. Zojer, F. Schürrer, Adv. Funct. Mater. 2009, 19, 958.
- 18 V. Palermo, M. Palma, P. Samori, Adv. Mater. 2006, 18, 145.
- 19 S. G. J. Mathijssen, M. J. Spijkman, A. M. Andringa, P. A. van Hal, I. McCulloch, M. Kemerink, R. A. J. Janssen, D. M. de Leeuw, Adv. Mater. 2010, 22, 5105.
- 20 H. Sugimura, K. Ushiyama, A. Hozumi, O. Takai, Langmuir 2000, 16, 885.
- 21 A. Hozumi, Y. Yokogawa, T. Kameyama, H. Sugimura, K. Hayashi, H. Shirayama, O. Takai, J. Vac. Sci. Technol. A 2001, 19, 1812.
- 22 S. G. J. Mathijssen, M. Kemerink, A. Sharma, M. Cölle, P. A. Bobbert, R. A. J. Janssen, D. M. de Leeuw, Adv. Mater. 2008, 20, 975
- 23 S. M. Sze, Physiscs of Semiconductor Devices, Wiley-Interscience, New York 1981.
- 24 D. J. Ellison, B. Lee, V. Podzorvo, C. D. Frisbie, Adv. Mater 2011, 23, 502.
- 25 L. S. McCarty, G. M. Whitesides, Angew. Chem. Int. Ed. 2008, 47, 2188.
- 26 C. G. Camara, J. V. Escobar, J. R. Hird, S. J. Putterman, Nature 2008, 455, 1089.
- 27 Y. Okabayashi, E. Ito, T. Isoshima, H. Ito, M. Haraet, Thin Solid Films 2009, 512, 839.
