Volume 11, Issue 3-4 pp. 817-820
Contributed Article

Luminance and current distribution of hybrid circular GaN-based resonant-cavity light-emitting diodes with lateral current injection on the n- and p-side

Thorsten Passow

Corresponding Author

Thorsten Passow

Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany

Phone: +49 761 5159 503, Fax: +49 761 5159 71503Search for more papers by this author
Michael Kunzer

Michael Kunzer

Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany

Search for more papers by this author
Paul Börner

Paul Börner

Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany

Search for more papers by this author
Wilfried Pletschen

Wilfried Pletschen

Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany

Search for more papers by this author
Klaus Köhler

Klaus Köhler

Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany

Search for more papers by this author
Joachim Wagner

Joachim Wagner

Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastraße 72, 79108 Freiburg, Germany

Search for more papers by this author
First published: 24 January 2014

Abstract

Resonant-cavity light-emitting diodes emitting at around 400 nm based on an undoped bottom AlInN/GaN distributed Bragg reflector (DBR) and a top dielectric SiO2/ZrO2 DBR with circular emitting apertures of diameters ranging from 5 to 200 µm are demonstrated. The current distribution is investigated by luminance distribution imaging and three-dimensional device simulations for different current densities. The current distribution exhibits a maximum in the aperture centre or is homogeneous up to an aperture diameter of 50 µm independent of the current density. A minimum occurs in the aperture centre for larger diameters increasing with increasing diameter and current density. The current distribution improves with larger n-GaN thickness and higher contact resistance between the transparent In2O3:Sn (ITO) electrode and the p-GaN contact layer. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

The full text of this article hosted at iucr.org is unavailable due to technical difficulties.