ICNS-9 – Contributed Article

Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors

Corresponding Author

Kazuya Ikeda

[email protected]

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this author

Yasuhiro Isobe,

Yasuhiro Isobe

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Hiromichi Ikki,

Hiromichi Ikki

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Tatsuyuki Sakakibara,

Tatsuyuki Sakakibara

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Motoaki Iwaya,

Motoaki Iwaya

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Tetsuya Takeuchi,

Tetsuya Takeuchi

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Satoshi Kamiyama,

Satoshi Kamiyama

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Isamu Akasaki,

Isamu Akasaki

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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Hiroshi Amano,

Hiroshi Amano

Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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Kazuya Ikeda,

Corresponding Author

Kazuya Ikeda

[email protected]

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, JapanSearch for more papers by this author

Yasuhiro Isobe,

Yasuhiro Isobe

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Search for more papers by this author

Hiromichi Ikki,

Hiromichi Ikki

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Search for more papers by this author

Tatsuyuki Sakakibara,

Tatsuyuki Sakakibara

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Search for more papers by this author

Motoaki Iwaya,

Motoaki Iwaya

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Tetsuya Takeuchi,

Tetsuya Takeuchi

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Satoshi Kamiyama,

Satoshi Kamiyama

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

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Isamu Akasaki,

Isamu Akasaki

Faculty of Science and Technology, Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan

Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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Hiroshi Amano,

Hiroshi Amano

Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Akasaki Research Center, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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First published: 29 November 2011

https://doi.org/10.1002/pssc.201100492

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Abstract

We report on the electrical properties of AlInN/GaInN heterostructures fabricated with InN molar fractions of 0 to 0.6 in the GaInN layer. High-density two-dimensional electron gases are formed near the interfaces of AlInN/AlN/GaInN at InN molar fractions of 0.3 and 0.6. The Al_0.82In_0.18N/AlN/Ga_0.4In_0.6N/GaN heterostructure field-effect transistors exhibited static characteristics. The maximum drain-source current reached a value of 0.26 A/mm (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Volume9, Issue3-4

Special Issue:9th International Conference on Nitride Semiconductors (ICNS‐9); see further papers in Phys. Status Solidi B 249, No. 3 (2012) and Phys. Status Solidi A 209, No. 3 (2012) • E‐MRS 2011 Spring Meeting – Symposium H; see further papers in Phys. Status Solidi A 209, No. 1 (2012) • E‐MRS 2011 Spring Meeting – Symposium F; see further papers in Phys. Status Solidi RRL 6, No. 2 (2012) and Phys. Status Solidi B 249, No. 3 (2012)

March 2012

Pages 942-944

Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors

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Fabrication of AlInN/AlN/GaInN/GaN heterostructure field-effect transistors

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