ICNS-9 – Contributed Article

Normally-off AlGaN/GaN MOSHFET using ALD SiO₂ tunnel dielectric and ALD HfO₂ charge storage layer for power device application

Corresponding Author

Bongmook Lee

[email protected]

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Phone: +01 919 513 7364Search for more papers by this author

Casey Kirkpatrick,

Casey Kirkpatrick

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Search for more papers by this author

Young-hwan Choi,

Young-hwan Choi

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Search for more papers by this author

Xiangyu Yang,

Xiangyu Yang

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

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Alex Q. Huang,

Alex Q. Huang

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

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Veena Misra,

Veena Misra

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

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Bongmook Lee,

Corresponding Author

Bongmook Lee

[email protected]

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Phone: +01 919 513 7364Search for more papers by this author

Casey Kirkpatrick,

Casey Kirkpatrick

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Search for more papers by this author

Young-hwan Choi,

Young-hwan Choi

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Search for more papers by this author

Xiangyu Yang,

Xiangyu Yang

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Search for more papers by this author

Alex Q. Huang,

Alex Q. Huang

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Search for more papers by this author

Veena Misra,

Veena Misra

Department of Electrical and Computer Engineering, North Carolina State University, Campus Box 7911, Raleigh, North Carolina, 27606, USA

Search for more papers by this author

First published: 29 February 2012

https://doi.org/10.1002/pssc.201100422

Citations: 11

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Abstract

In this work, we have demonstrated a normally-off AlGaN/GaN metal-oxide semiconductor heterojunction field effect transistor (MOSHFET) wherein the enhancement mode operation is enabled by charge storage characteristics within a high-k layer. By combining ALD SiO₂ tunnel dielectric and HfO₂ charge trapping layer, up to 7 V of threshold voltage (V_T) shift depending on the applied gate pulse amplitude (corresponding ∼ 1.2 × 10¹³ charges/cm² stored within the charge storage layer) is obtained. Electrical characteristics such as gate leakage current, transconductance, and off-state breakdown after programming are similar to the initial device. Retention characteristics show about 20% of charge loss after 20000 s. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)