Volume 9, Issue 3-4 pp. 631-634
ICNS-9 – Contributed Article

Fabrication and properties of etched GaN nanorods

Philip Shields

Corresponding Author

Philip Shields

Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY, UK

Phone: +00 44 1225 386063, Fax: +00 44 1225 386305Search for more papers by this author
Maxime Hugues

Maxime Hugues

CRHEA-CNRS, Rue Bernard Grégory, 06560 Valbonne, France

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Jesus Zúñiga-Pérez

Jesus Zúñiga-Pérez

CRHEA-CNRS, Rue Bernard Grégory, 06560 Valbonne, France

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Mike Cooke

Mike Cooke

Oxford Instruments Plasma Technology, North End, Yatton, Bristol BS49 4AP, UK

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Mark Dineen

Mark Dineen

Oxford Instruments Plasma Technology, North End, Yatton, Bristol BS49 4AP, UK

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Wang Wang

Wang Wang

Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY, UK

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Federica Causa

Federica Causa

Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY, UK

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Duncan Allsopp

Duncan Allsopp

Department of Electronic and Electrical Engineering, University of Bath, Bath, BA2 7AY, UK

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First published: 21 November 2011
Citations: 30

Abstract

Gallium nitride nanorod arrays have been created via dry etching in Cl2/Ar plasma using a Ni mask formed by nanoimprint lithography and lift-off. Aspect ratios greater than 20 are demonstrated by optimizing the etch conditions to achieve near-vertical sidewalls. Such top-down etched nanorod arrays have greater uniformity when compared to bottom-up arrays, with the process already having been demonstrated on 4-inch wafers. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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