Spin-coating technique was used to deposit precursor layers for chalcopyrite films of the series CuInX₂ and Cu(In,Ga)X₂ where X = S or Se or (S,Se). The influence of different parameters of the process, such as solution composition, air pre-treatment and chalcogenation treatment is discussed with respect to film applicability in photovoltaic devices. Layer morphology, stochiometry and crystalline structure varied widely with the different compositions and treatments. Highly oriented CuInSe₂ and Cu(In,Ga)Se₂ films were obtained. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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Volume5, Issue11

Special Issue:2007 E‐MRS Fall Meeting, Symposium B: Chemical and Electrochemical Synthesis of Advanced Materials and Nanostructures on Solid Surfaces • Euromat 2007 – European Congress and Exhibition on Advanced Materials and Processes

November 2008

Pages 3437-3440

Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure

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Influence of treatment conditions on chalcopyrite films deposited at atmospheric pressure

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