Contributed Article
In-situ measurement of the strain relaxation of GaN nanograins during X-ray irradiation
Abstract
GaN nanograins were grown on a c-plane sapphire substrate and their strain relaxation due to x-ray irradiation was investigated in-situ by utilizing synchrotron xray scattering. The GaN nanograins were constantly exposed to the synchrotron X-ray and θ -2θ scans through the (002) Bragg peak of GaN were repeatedly carried out during the irradiation.
The Bragg peak of the compressively strained GaN nanograins gradually shifted toward higher angle, which implies that the GaN nanograins in compressive strain experienced strain relaxation during x-ray irradiation. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
