MOVPE growth and investigation of AlInN/AlN multiple quantum wells
Abstract
We report about the MOVPE growth and characterisation of Al0.90In0.10N single layers and multiple quantum well structures (MQW) containing 8 periods of Al0.90In0.10N/AlN quantum wells. All samples show good quality in high-resolution X-ray diffractometry (HRXRD) evaluation, superlattice fringes up to the 2nd order can be seen for the MQW sample. In optical transmission experiments, an absorption edge for the Al0.90In0.10N single layer is detected at 4.9 eV. Due to the low intensity of emission and limited sensitivity of our setup in this spectral region, photoluminescence (PL) emission above 4 eV is only visible for the MQW sample. Both PL and cathodoluminescence (CL) measurements show an emission peak at longer wavelength for the Al0.90In0.10N/AlN MQW sample. When increasing the excitation current density in CL, the emission at lower wavelength is clearly enhanced, while it is slightly reduced at higher wavelength. We believe this to be a saturation effect of a defect-related emission. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
