Contributed Article
Optimization of HVPE growth of freestanding c-plane GaN layers using (100) γ-LiAlO2 substrates
Abstract
Freestanding c-plane GaN substrates are obtained using (100) γ-LiAlO2 substrates due to spontaneous separation during post-growth cool down. It is shown that by growth optimization the structural properties of 200 µm thick freestanding GaN layers can be improved resulting in FWHM values of ω-rocking curves below 400 arcsec for 002 and 302 reflection and threading-dislocation densities below 109 cm–2. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
