Original Paper
Donor impurity-related optical absorption spectra in GaAs-Ga1–xAlxAs quantum wells: hydrostatic pressure and Γ –X conduction band mixing effects
Abstract
Using a variational procedure within the effective mass approximation, the mixing between the Γ and X conduction band valleys in GaAs-Ga1–x Alx As quantum wells is investigated by taking into account the effect of applied hydrostatic pressure. Some optical properties such as donor and/or acceptor binding energy and impurity-related transition energies are calculated and comparisons with available experimental data are presented. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
