Original Paper
Microphotoluminescence of GaN/AlN quantum dots grown by MBE
First published: 12 June 2006
Abstract
We performed microphotoluminescence studies of structure with single layered of GaN QDs embedded in an AlN matrix grown by MBE. Distinct UV PL lines have been found and attributed to several subgroups of QDs with different size. Relative intensity of the PL lines depends on the excitation power and temperature, whereas their energy position does not change with the excitation power evidencing in negligible screening of the built-in electric field in GaN/AlN QDs by free carriers. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
