Volume 3, Issue 6 pp. 1408-1411
Original Paper

Effect of carrier gas on GaN epilayer characteristics

Y. S. Cho

Corresponding Author

Y. S. Cho

Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

Phone: +49 2461 61 2991, Fax: +49 2461 61 2940Search for more papers by this author
H. Hardtdegen

H. Hardtdegen

Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

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N. Kaluza

N. Kaluza

Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

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N. Thillosen

N. Thillosen

Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

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R. Steins

R. Steins

Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

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Z. Sofer

Z. Sofer

Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

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H. Lüth

H. Lüth

Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany

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First published: 12 June 2006
Citations: 48

Abstract

Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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