Original Paper
Internal laser parameters and optical properties of laser with CdSe quantum dots in ZnSe matrix
Abstract
Photoluminescence (PL), PL excitation (PLE) spectra as well as internal laser characteristics of CdSe quantum dots (QDs) in ZnSe matrix grown by molecular beam epitaxy (MBE) and multi-cycle migration enhanced epitaxy (MEE) were investigated. The peak PL intensity of the CdSe QDs grown by MEE in an asymmetric waveguide is by one order of magnitude more than that of the CdSe QDs grown by MBE in a symmetric waveguide. As a result, the laser characteristics have been significantly improved. The internal laser parameters were estimated to be: ΓG0 ∼ 66 cm–1, ηi ∼ 13–17%, αi ∼ 5–15 cm–1 for MBE CdSe QDs and ΓG0 ∼ 69 cm–1, ηi ∼ 42%, αi ∼ 2–10 cm–1 for MEE CdSe QDs. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
