Volume 3, Issue 4 pp. 1001-1004
Original Paper

Influence of annealing on the structural and magnetic properties of epitaxial Zn1–xMnxO films grown by MOCVD on sapphire

E. Chikoidze

E. Chikoidze

Material Science Department, Tbilisi State University, Chavchavadze Ave 3, 0027Tbilisi, Georgia

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H. J. von Bardeleben

H. J. von Bardeleben

Institut des NanoSciences de Paris- INSP, Universités Paris 6&7, UMR 7588 au CNRS, 140, rue de Lourmel, 75015 Paris, France

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Y. Dumont

Y. Dumont

Laboratoire de Physique des Solides et de Cristallogenèse, CNRS, Université de Versailles St-Quentin en Yvelines, 1 Place Aristide Briand, 92195 Meudon Cedex, France

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F. Jomard

F. Jomard

Laboratoire de Physique des Solides et de Cristallogenèse, CNRS, Université de Versailles St-Quentin en Yvelines, 1 Place Aristide Briand, 92195 Meudon Cedex, France

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O. Gorochov

O. Gorochov

Laboratoire de Physique des Solides et de Cristallogenèse, CNRS, Université de Versailles St-Quentin en Yvelines, 1 Place Aristide Briand, 92195 Meudon Cedex, France

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First published: 16 March 2006
Citations: 2

Abstract

Thermal annealing of MOCVD grown Zn1–xMnxO layers between 300 °C and 1000 °C in an oxygen atmosphere modifies both their latttice parameters and their magnetic properties. Combined X-ray diffraction and EPR studies indicate a redistribution of intrinsic defects but persistent antiferromagnetic phase in the annealed films. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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