physica status solidi c
Volume 3, Issue 4 pp. 1156-1159
Original Paper

Electrophysical and cathodoluminescent properties of low-dimensional CdSSe/CdS structure

V. I. Kozlovsky, 

V. I. Kozlovsky

P.N. Lebedev Physical Institute of RAS, Leninsky pr. 53, 119991 Moscow, Russia

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P. I. Kuznetsov, 

P. I. Kuznetsov

Institute of Radioengineering and Electronics of RAS, Vvedenskogo 1, 141190 Fryazino, Russia

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V. G. Litvinov, 

Corresponding Author

V. G. Litvinov

P.N. Lebedev Physical Institute of RAS, Leninsky pr. 53, 119991 Moscow, Russia

Ryazan State Radioengineering Academy, Gagarina 59/1, 390005 Ryazan, Russia

Phone: +7 0912 92 15 84, Fax: +7 0912 92 22 15Search for more papers by this author
D. A. Sannikov, 

D. A. Sannikov

P.N. Lebedev Physical Institute of RAS, Leninsky pr. 53, 119991 Moscow, Russia

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G. G. Yakushcheva, 

G. G. Yakushcheva

Institute of Radioengineering and Electronics of RAS, Vvedenskogo 1, 141190 Fryazino, Russia

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First published: 07 March 2006
https://doi.org/10.1002/pssc.200564627

Abstract

The CdSSe/CdS structure grown by metalorganic vapour phase epitaxy (MOVPE) and prepared for vertical cavity surface emitting laser (VCSEL) was investigated by the capacitance-voltage characteristics (CV), thermostimulated capacity (TSC), current deep level transient spectroscopy (CDLTS) and cathodoluminescence (CL) methods. Deep levels (DLs) with an activation energies 0.279–1.145 eV were detected by CDLTS and TSC. Hole emission from the ground quantized level in the CdSSe quantum well (QW) was studied. The activation energy of hole emission was used for an estimation of the valence band offset in the type-II CdSSe/CdS heterostructure. Luminescence and laser properties are discussed. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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