Volume 3, Issue 4 pp. 1152-1155

Original Paper

Development of high efficient green LEDs of ZnSSe:Te-ZnMgSSe DH structure on p-GaAs and its degradation mechanism

T. Abe,

Corresponding Author

T. Abe

[email protected]

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

Phone: +81 857 31 5233, Fax: +81 857 31 0880Search for more papers by this author

K. Makimoto,

K. Makimoto

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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M. Adachi,

M. Adachi

Venture Business Laboratory, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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T. Tanikawa,

T. Tanikawa

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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N. Inoue,

N. Inoue

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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T. Nishinaga,

T. Nishinaga

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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H. Kasada,

H. Kasada

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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K. Ando,

K. Ando

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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T. Abe,

Corresponding Author

T. Abe

[email protected]

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

Phone: +81 857 31 5233, Fax: +81 857 31 0880Search for more papers by this author

K. Makimoto,

K. Makimoto

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

Search for more papers by this author

M. Adachi,

M. Adachi

Venture Business Laboratory, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

Search for more papers by this author

T. Tanikawa,

T. Tanikawa

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

Search for more papers by this author

N. Inoue,

N. Inoue

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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T. Nishinaga,

T. Nishinaga

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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H. Kasada,

H. Kasada

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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K. Ando,

K. Ando

Department of Electrical and Electronic Engineering, Tottori University, 4-101 Koyama-Minami, Tottori 680-8552, Japan

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First published: 07 March 2006

https://doi.org/10.1002/pssc.200564626

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Abstract

We present new green double-hetero (DH) structure light-emitting diodes (LEDs) of ZnSSe:Te (active layer)–ZnMgSSe (cladding layer) on p-type GaAs substrates grown by molecular beam epitaxy (MBE).We have confirmed very efficient green emission in Te-bias modulation doped ZnSSe:Te consists of ZnSSe:Te (Te: 2%, 50 Å)/ZnSSe:Te (Te: 5%, 50 Å) superlattice. A LED with this modulation doping also shows a strong durability for device degradation due to effective Te-hardening effect. A new LED structure on ptype GaAs exhibits a high extraction efficiency of light emission, which is three times larger in magnitude than LEDs on n-type GaAs. The new LED also reveals a long device lifetime (in bare chip) over 1300 hours under 3A/cm² at room temperature. From a simple aging test on the green LEDs, gradual degradation is classified into “slow-mode degradation”, which is caused by a generation of point defects (donor-like centers) in p-type ZnMgSSe cladding layer. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

References

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Volume3, Issue4

March 2006

Pages 1152-1155

Development of high efficient green LEDs of ZnSSe:Te-ZnMgSSe DH structure on p-GaAs and its degradation mechanism

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Development of high efficient green LEDs of ZnSSe:Te-ZnMgSSe DH structure on p-GaAs and its degradation mechanism

Abstract

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