Phonon transport and imaging
Effect of intermediate layer on resonance phonon transport
Abstract
Multi-channel mechanism of resonance phonon transport through a Si-Cu point contact is studied. It is shown that the peaks of the reduced heat flux in the temperature range 4 K < T < 9.3 K are caused by resonance phonon transfer through different layers of impurity atoms present in a point contact. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
