Volume 0, Issue 6 pp. 1940-1949
Review Article

Gallium-nitride-based devices on silicon

A. Dadgar

Corresponding Author

A. Dadgar

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

Phone: +49 391 67 11384, Fax: +49 391 67 11130Search for more papers by this author
M. Poschenrieder

M. Poschenrieder

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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I. Daumiller

I. Daumiller

University of Ulm, Department of Electron Devices and Circuits, 89069 Ulm, Germany

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M. Kunze

M. Kunze

University of Ulm, Department of Electron Devices and Circuits, 89069 Ulm, Germany

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A. Strittmatter

A. Strittmatter

Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

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T. Riemann

T. Riemann

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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F. Bertram

F. Bertram

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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J. Bläsing

J. Bläsing

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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F. Schulze

F. Schulze

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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A. Reiher

A. Reiher

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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A. Krtschil

A. Krtschil

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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O. Contreras

O. Contreras

Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287, USA

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A. Kaluza

A. Kaluza

Global Light Industries GmbH, Carl-Friedrich-Gauß-Str. 1, 47475 Kamp-Lintfort, Germany

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A. Modlich

A. Modlich

Global Light Industries GmbH, Carl-Friedrich-Gauß-Str. 1, 47475 Kamp-Lintfort, Germany

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M. Kamp

M. Kamp

Global Light Industries GmbH, Carl-Friedrich-Gauß-Str. 1, 47475 Kamp-Lintfort, Germany

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L. Reißmann

L. Reißmann

Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

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A. Diez

A. Diez

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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J. Christen

J. Christen

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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F.A. Ponce

F.A. Ponce

Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287, USA

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D. Bimberg

D. Bimberg

Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany

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E. Kohn

E. Kohn

University of Ulm, Department of Electron Devices and Circuits, 89069 Ulm, Germany

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A. Krost

A. Krost

Otto-von Guericke Universität Magdeburg, Institut für Experimentelle Physik, Fakultät für Naturwissenschaften, Postfach 4120, 39016 Magdeburg, Germany

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First published: 27 August 2003
Citations: 19

Abstract

GaN devices on Si are interesting for low-cost, high-power devices as LEDs and FETs. Until recently, most LED and FET devices suffered from cracking and low output power and additionally, from high series resistances for vertically contacted LEDs. Here, we give a brief overview on state of the art crack-free, bright LEDs with an output power up to 0.42 mW and AlGaN/GaN FETs with an output power of 2.5 W/mm at 2 GHz. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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