Fine structure of excitons in direct band gap cubic semiconductors is studied. The general formulae for exchange energy of any excitonic states are given. Splitting of energy levels and corresponding wave functions are written for nS and nP exciton states for example.

Abstract

[Russian Text Ignored.]

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Volume161, Issue2

1 October 1990

Pages 637-646

Electron–Hole Exchange Interaction of Excitons in Direct Band Gap Cubic Semiconductors with Degenerated Valence Band

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Abstract

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Electron–Hole Exchange Interaction of Excitons in Direct Band Gap Cubic Semiconductors with Degenerated Valence Band

Abstract

Abstract

References

References

Related

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