Volume 69, Issue 2 pp. 717-723
Original Paper
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The electron–electron interaction in gapless semiconductors

B. L. Gelmont

B. L. Gelmont

A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad

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V. I. Ivanov-Omskii

V. I. Ivanov-Omskii

A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad

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V. K. Ogorodnikov

V. K. Ogorodnikov

A. F. Ioffe Physico-Technical Institute, Academy of Sciences of the USSR, Leningrad

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First published: 1 June 1975
Citations: 13

Abstract

en

The effect of the Coulomb interaction on the dielectric function, the mobility, and the energy spectrum of gapless semiconductors is analyzed. It is shown that the hole energy is strongly renormalized due to the nonlocality of the potential. The resulting shape of the valence band and its dependence on the electron concentration is considered. The nonlocality of the lattice potential diminishes the ground state energy of the acceptor.

Abstract

ru

[Russian Text Ignored].

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