An expression for the thermopower S in the variable range hopping regime near the Fermi energy is derived. This allows the calculation of S for an arbitrary density of states, provided the localisation length, α⁻¹, is kept constant. An application is made to estimate the density of states function of amorphous Si from conductivity and thermopower data.

Abstract

Ein Ausdruck für die Thermokraft S im Bereich des Variable-Range-Hopping am Ferminiveau wird hergeleitet. Der Formalismus erlaubt die Berechnung von S für beliebige Modelle der Zustandsdichte. Die Lokalisierungslänge der Zustände, α⁻¹, wird dabei als konstant angenommen. Der Formalismus wird zu einer Abschätzung der Form der Zustandsdichtefunktion in amorphem Silizium aus experimentellen Leitfähigkeits- und Thermokraftdaten verwendet.

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Volume67, Issue2

1 February 1975

Pages 709-714

Thermopower calculation for variable range hopping — application to α-Si

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Thermopower calculation for variable range hopping — application to α-Si

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