Using a generalized theory of the photoelectromagnetic (PEM) effect, the parameters of non-cooled InAs_0.35Sb_0.65 PEM far-infrared detectors are analysed. The responsivity R_v and detectivity D* are estimated in dependence of detector geometry and of recombination velocities at the surface. The highest values for R_v ≈ 0.1 V/W and for D* ≈ 10⁵ m Hz^1/2 W⁻¹ at λ = 10.6 μm are obtained for p-type material with p/n_i ≈ 10.

Abstract

[Russian Text Ignored].

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Volume91, Issue2

16 October 1985

Pages 745-751

On the Performance of Non-Cooled (In, As)Sb Photoelectromagnetic Detectors for 10.6 m Radiation^†

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On the Performance of Non-Cooled (In, As)Sb Photoelectromagnetic Detectors for 10.6 m Radiation†

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On the Performance of Non-Cooled (In, As)Sb Photoelectromagnetic Detectors for 10.6 m Radiation^†