Transparent conducting indium oxide and indium tin oxide are prepared by electroless deposition technique. The structural studies reveal that the films are polycrystalline in nature and contain predominantly In₂O₃ and In₂O₃:Sn (ITO). Both the films, In₂O₃ and ITO exhibit a resistivity as low as 10⁻² and 10⁻⁴ Ωcm, IR reflection ≈ 40 and ≈ 60%, and transmission in visible range ≈ 70 and ≈ 80%, respectively. The band gap of In₂O₃ and ITO is found to be ≈ 3.5 and ≈ 3.6 eV, respectively.

Abstract

Transparentes leitfähiges Indiumoxid und Indiumzinnoxid werden mit einer elektrodenlosen Aufdampftechnik präpariert. Die Strukturuntersuchungen zeigen, daß die Schichten polykristallin sind und vorwiegend In₂O₃ und In₂O₃:Sn (ITO) enthalten. Beide Schichten In₂O₃ und ITO haben einen niedrigen Widerstand von 10⁻² bzw. 10⁻⁴ Ωcm, das IR Reflexionsvermögen beträgt ≈ 40 bzw. 60% und die Transmission im sichtbaren Bereich ≈ 70 bzw. 80%. Die Bandlücke von In₂O₃ und ITO wird zu 3,5 bzw. 3,6 eV bestimmt.

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Volume87, Issue1

16 January 1985

Pages 79-83

Electroless deposition of In₂O₃ and In₂O₃:Sn(ITO)

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Electroless deposition of In₂O₃ and In₂O₃:Sn(ITO)