Two original methods of determining the complementary transition thresholds from deep traps in semiconducting materials are developed. Then they are applied to oxygen implanted and non-implanted gallium arsenide. The obtained results corroborate and complete the existing data and hypothesis concerning deep traps in GaAs before and after implantation.

Abstract

Deux méthodes originales de détection par mesure de photocapacité des seuils de transition complémentaires à partir de pièges profonds dans les semiconducteurs sont développées. Elles sont ensuite appliquées à l'arséniure de gallium implanté et non-implanté en oxygène. Les résultats obtenus confirment et complètent les connaissances et hypothèses actuelles sur les pièges profonds existant dans GaAs avant et après implantation.

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Volume50, Issue1

16 November 1978

Pages 311-322

Determination of complementary transition energy threshold by photocapacitance measurements application to oxygen implanted GaAs

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Determination of complementary transition energy threshold by photocapacitance measurements application to oxygen implanted GaAs

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